drf1300 500v, 30a, 30mhz the drf1300 is a push-pull hybrid containing two high power gate drivers and two power mosfets. it was designed to provide the sys- tem designer increased exibility, higher performance, and lowered cost over a non-integrated solution. this low parasitic approach, coupled with the schmitt trigger input, kelvin signal ground, anti-ring function invert and non-invert select pin provide improved stability and control in kilowatt to multi-kilowatt, high frequency ism applications. typical applications ? class c, d and e rf generators ? switch mode power ampli ers ? hv pulse generators ? ultrasound transducer drivers ? acoustic optical modulators features ? switching frequency: dc to 30mhz ? inverting non-inverting select ? low pulse width distortion ? single power supply (per section) ? 1v cmos schmitt trigger input 1v hysteresis ? switching speed 3-4ns ? b vds = 500v ? i ds = 30a max. per-section ? r ds(on) .24 ohm ? p d = 550w per-section ? rohs compliant mosfet push-pull hybrid microsemi website - http://www.microsemi.com 050-4971 rev e 12-2009 symbol parameter ratings unit v dd supply voltage 15 v in, fn input single voltages -.7 to +5.5 i o pk output current peak 8a t jmax operating temperature 175 c driver absolute maximum ratings driver speci cations symbol parameter min typ max unit v dd supply voltage 10 15 v in input voltage 3 5 in (r) input voltage rising edge 3 ns in (f) input voltage falling edge 3 i ddq quiescent current 2ma i o output current 8a c iss input capacitance 3 r in input parallel resistance 1m v t(on) input, low to high out (see truth table) 0.8 1.1 v v t(off) input, high to low out (see truth table) 1.9 2.2 t dly time delay (throughput) 38 ns t r rise time 5 ns t f fall time 5 d s in driver 30a mosfets d s in
drf1300 mosfet absolute maximum rating (per-section) symbol parameter min typ max unit bv dss drain source voltage 500 v i d continuous drain current t hs = 25c 30 a r ds(on) drain-source on state resistance 0.24 t jmax operating temperature 175 c mosfet dynamic characteristics (per-section) section a and b output switching performance symbol characteristic min typ max typ t on leading edge 10% to 90% 2 3 4 ns t off trailing edge 10% to 90% 45 tbd 49 t dly(on) total throughput delay time, on 45 tbd 47 t dly(off) total throughput delay time, off 49 50 51 ? t dly(on) delta t on delay between section a and b -0.5 0 1.5 ? t dly(off) delta t off delay between section a and b 0 0.6 1.3 symbol parameter min typ max unit c iss input capacitance 1800 pf c oss output capacitance 335 c rss reverse transfer capacitance 75 mosfet thermal characteristics (total package) symbol parameter min typ max unit r jc junction to case thermal resistance .06 c/w r jhs junction to heat sink thermal resistance .140 t jstg storage junction temperature -55 to 150 c p dhs maximum power dissipation @ t sink = 25c 1.07 kw p dc total power dissipation @ t c = 25c 2.5 microsemi reserves the right to change, without notice, the speci cations and information contained herein. 050-4971 rev e 12-2009 symbol parameter min typ max unit c out output capacitance 2500 pf r out output resistance .8 l out output inductance 3 nh f max operating frequency cl = 3000nf + 50 30 mhz f max operating frequency rl = 50 50 driver output characteristics symbol parameter min typ max unit r jc thermal resistance junction to case 1.5 c/w r jhs thermal resistance junction to heat sink 2.5 t jstg storage temperature -55 to 150 c p djhs maximum power dissipation @ t sink = 25c 60 w p djc total power dissipation @ t c = 25c 100 driver thermal characteristics
drf1300 050-4971 rev e 12-2009 the test circuit illustrated in figure 2 was used to evaluate the drf1300 (available as an evaluation board drf13xx/evalsw.) t he input control signal is applied via in and sg pins using rg188. this provides excellent noise immunity and control of the signal gro und currents. the +v dd inputs (pins 2, 6, 8 and 12) should be heavily by-passed by 1uf capacitors as close to the pins as possible. the capacitors u sed for this function must be capable of supporting the rms currents and frequency of the gate load. r l set for i dm at v ds max this load is used to evaluate the output performance. figure 2, drf1300 test circuit figure 1, drf1300 circuit diagram the drf1300 is con gured as a push pull hybrid incorporating two independent channels con gured with a common source each consisting of a driver, a high voltage mosfet and by-pass capacitors. the function of the by-pass capacitors c1 and c2 is to reduce the intern al parasitic loop inductance. this coupled with the tight geometry of the hybrid allows optimal gate drive to the mosfet. this low parasitic ap proach coupled with the schmitt trigger input (in), kelvin signal ground (sg) and the anti-ring function; provide improved stability and contr ol in kilowatt to multi- kilowatt high frequency applications. the in pin should be referenced to the kelvin ground (sg) and is applied to a schmitt tr igger. the sg pin is a kelvin return for the in pin only. the signal is then applied to the intermediate drivers and level shifters; this se ction contains proprietary circuitry designed speci cally for ring abatement. to further increase the utility of the device the driver die and the mosfet die are adjacent die selected. this provides a very close match in the turn on and propagation delays. microsemi?s products are covered by one or more of u.s. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,5 03,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157, 886 6,939,743 7,342,262 and foreign patents. us and foreign patents pending. all rights reserved.
none of the inputs to u1 or u2 of the drf1300 are isolated for direct connection to a ground referenced power supply or control circuitry. isolation appropriate to the application is the responsibility of the end user. it is imperative that high output currents be restricted to the source (14, 16, 18) and drain (15, 17) pins by design. see drf100 for more information on driver ic used in the device. the function (fn, pin 3 or pin 9) is the invert or non-invert select pin, it is internally held high. figure 4, drf1300 mechanical outline all dimensions are .005 drf1300 050-4971 rev e 12-2009 truth table * referenced to sg fn (pin 3) in (pin 4) mosfet high high on high low off low high off low low on truth table * referenced to sg fn (pin 9) in (pin 10) mosfet high high on high low off low high off low low on pin assignments pin 1 ground pin 2 u1 +vdd pin 3 u1 fn pin 4 u1 in pin 5 u1 sg pin 6 u1 +vdd pin 7 ground pin 8 u2 +vdd pin 9 u2 fn pin 10 u2 in pin 11 u2 sg pin 12 u2 +vdd pin 13 ground pin 14 source pin 15 u2 drain pin 16 source pin 17 u1 drain pin 18 source
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